pm-mos-model
A cryogenic model for the MOS transistor. This is very much in an experimental stage to compare different physical modeling approaches. It is far from ready for productive use.
Licensing and copyright notice
This code was written by Paul Stampfer and Michael Sieberer for Paul's Master Thesis Characterization and modeling of semiconductor devices at cryogenic temperatures (2020).
The copyright (c) is with Infineon Technologies Austria AG, 2020. See the LICENSE file for the licensing terms.