jianguan210 / ChargeTransport.jl

Drift diffusion simulator for semiconductor devices

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ChargeTransport.jl -- Simulating charge transport in semiconductors

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ChargeTransport.jl simulates charge transport in semiconductors. To this end, it discretizes the semiconductor drift-diffusion equations via the Voronoi finite volume method as implemented in VoronoiFVM.jl.

Special features

  • heterostructures
  • 1D, 2D and 3D simulations
  • stationary and transient simulations
  • IV curves and scan protocols
  • an arbitrary amount of charge carriers may be added
  • thermodynamically consistent, physics preserving numerical methods
  • different charge carrier statistics per species (Boltzmann, Blakemore, Fermi-Dirac)

ChargeTransport.jl is a free software. For research purposes you may use it under the terms of the GNU Affero General Public License (AGPL). As a company you may contact any of the authors directly to obtain a commercial license. If you use this package in your work, please cite it according to CITATION.bib

The following papers rely on ChargeTransport.jl

[1.] D. Abdel, P. Farrell and J. Fuhrmann. Assessing the quality of the excess chemical potential flux scheme for degenerate semiconductor device simulation. Optical and Quantum Electronics 53 (163) (2021).

[2.] D. Abdel, P. Vágner, J. Fuhrmann and P. Farrell. Modelling charge transport in perovskite solar cells: Potential-based and limiting ion depletion. Electrochimica Acta 390 (2021).

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Drift diffusion simulator for semiconductor devices

License:GNU Affero General Public License v3.0


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